Methods of electrostatic control in semiconductor devices
US6399407B1 · kind B1 · utility
24Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2000 |
| Grant date | Jun 4, 2002 |
| Priority date | — |
| Expiry date | Feb 7, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/956
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light-emitting device having one or more depletion regions that are controlled by one or more control electrodes to vary the spatial distribution of the carriers in an active layer. The voltages on the control electrodes can be controlled to modulate the current density in the active layer and the output light intensity. The polarization of a surface emitting diode laser based on this device can be controlled or modulated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.