Patent · US Expired

Method of producing a II-VI semiconductor component containing selenium and/or sulrfur

US6399473B1 · kind B1 · utility

6Cited by

4References

14Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Frank Fischer · Mesa, US
Matthias Keller · Maineville, US
Thomas Litz · Würzburg, DE
Gottfried Landwehr · Würzburg, DE
Hans-Jürgen Lugauer · Sinzing, DE
Andreas Waag · Würzburg, DE
Markus Keim · Ansbach, DE

Key dates

Filing date	Jan 10, 2000
Grant date	Jun 4, 2002
Priority date	—
Expiry date	Jan 10, 2020

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/327
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A II-VI semiconductor component is produced with an active layer sequence having at least one II-VI semiconductor layer containing Se and/or S on a substrate. First, an Se-free II-VI interlayer based on BeTe is grown epitaxially on the substrate in an essentially Se-free and S-free first epitaxy chamber. The active layer sequence is then grown epitaxially on the Se-free II-VI semiconductor layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.