Semiconductor device with silicide layers and method of forming the same
US6399485B1 · kind B1 · utility
12Cited by
7References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2000 |
| Grant date | Jun 4, 2002 |
| Priority date | — |
| Expiry date | Jul 28, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a semiconductor device having: at least a first diffusion layer having a first impurity concentration; at least a second diffusion layer having a first impurity concentration which is lower than the first impurity concentration, and the first and second diffusion layers being of the same conductivity type, wherein a silicide layer is formed over the first diffusion layer, while no silicide layer is formed over the second diffusion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.