PE-silane oxide particle performance improvement
US6399522B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 1998 |
| Grant date | Jun 4, 2002 |
| Priority date | — |
| Expiry date | May 11, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a PE-silane oxide layer with a greatly reduced particle count is described. A semiconductor substrate is provided over which a silicon oxide film is to be formed. The silicon oxide film is formed by the steps of: 1) pre-flowing a non-silane gas into a deposition chamber for at least two seconds whereby the pre-flowing step prevents formation of particles on the silicon oxide film, and 2) thereafter depositing a silicon oxide film by chemical vapor deposition by flowing a silane gas into the deposition chamber to complete formation of a silicon oxide film using plasma-enhanced chemical vapor deposition in the fabrication of an integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.