Insulative matrix material
US6399666B1 · kind B1 · utility
27Cited by
38References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 27, 1999 |
| Grant date | Jun 4, 2002 |
| Priority date | — |
| Expiry date | Jan 27, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/09701
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a process for forming an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises porous organic polysilica.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.