Semiconductor device with semiconductor circuit comprising semiconductor units, and method for fabricating it
US6399960B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 1999 |
| Grant date | Jun 4, 2002 |
| Priority date | — |
| Expiry date | Jul 14, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6743
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention is to provide a high-productivity method for fabricating a TFT device having different LDD structures on one and the same substrate, and the TFT device. Specifically, the invention provides a novel TFT structure, and a high-productivity method for fabricating it. A Ta film or a Ta-based film having good heat resistance is used for forming interconnections, and the interconnections are covered with a protective film. The interconnections can be subjected to heat treatment at high temperatures (400 to 700° C.), and, in addition, the protective film serves as an etching stopper. In the peripheral driving circuit portion in the device, TFTs having an LDD structure are disposed in a self-aligned process in which is used side walls 126 and 127; while in the pixel matrix portion therein, TFTs having an LDD structure are disposed in a non-self-aligned process in which is used an insulator 125.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.