Field emission device having an emitter-enhancing electrode
US6400068B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2000 |
| Grant date | Jun 4, 2002 |
| Priority date | — |
| Expiry date | Jan 18, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J3/022
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A field emission device (100) includes an electron emitter (115) and an emitter-enhancing electrode (117) having an enhanced-emission structure (131), which is disposed proximate to electron emitter (115). Enhanced-emission structure (131) is embodied by, for example, each of the following structures: a tapered portion (118) of emitter-enhancing electrode (117), an electron-emissive edge (135) that is generally parallel to an axis (136) of electron emitter (115), a combination of a conductive layer (137) and an electron-emissive layer (138) that is disposed proximate to an edge (133) of conductive layer (137), and an electron-emissive layer (146) having a thickness of less than about 500 angstroms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.