Polysilicon resistor and a method of producing it
US6400252B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2000 |
| Grant date | Jun 4, 2002 |
| Priority date | — |
| Expiry date | Feb 14, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/47
Abstract
A resistor has a resistor body of polycrystalline silicon and electric contact regions arranged on and/or in the resistor body, so that a resistor part is formed between the contact regions, which gives the resistor its resistance. The material in the resistor body is doped with for example boron to define its resistance. To give the resistor a good long term stability the resistor part is protected by one or more oxide based blocking layers produced from transition metals. These blocking layers can prevent movable kinds of atoms such as hydrogen from reaching the unsaturated bonds in the polysilicon. Such movable kinds of atoms can for example exist in passivation layers located outermost in an integrated electronic circuit in which the resistor is included. The blocking layers can be produced from layers having 30% titanium and 70% tungsten, which are oxidized using hydrogen peroxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.