Thin film transistor-liquid crystal display having enhanced storage capacitance and method for manufacturing the same
US6400424B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1999 |
| Grant date | Jun 4, 2002 |
| Priority date | — |
| Expiry date | Jun 29, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136213
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed are a thin film transistor-liquid crystal display(TFT-LCD) improving aperture ratio and having increased storage capacitance, and a manufacturing method of the same.The TFT-LCD comprises: a glass substrate; gate bus lines arranged parallel each other on the glass substrate; data bus lines disposed perpendicular to the gate bus lines thereby defining pixel region; a thin film transistor formed adjacent to each intersection of the gate bus line and the data bus line; a transparent pixel electrode being contacted with the thin film transistor and disposed at each pixel region; a transparent storage electrode formed at a bottom of the transparent pixel electrode, wherein the transparent storage electrode forms a storage capacitance together with the pixel electrode; and a common electrode line for transmitting common signal to the storage electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.