Content addressable memory with potentials of search bit line and/or match line set as intermediate potential between power source potential and ground potential
US6400594B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2001 |
| Grant date | Jun 4, 2002 |
| Priority date | — |
| Expiry date | Mar 1, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C15/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A content addressable memory device includes a storage bit line pair for reading storage data from and writing storage data to a content addressable memory cell, a search bit line pair, wired independently from the storage bit line pair, for providing search data to the content addressable memory cell, and a first unit for realizing a smaller swing in the level of the search bit line pair by setting the potential of the search bit line pair to an intermediate potential between a power source potential and a ground potential during match searching, and/or a second unit for realizing a smaller swing in the level of a match line by setting a precharge level of the match line to the intermediate potential between the power source potential and the ground potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.