Voltage raising circuit for semiconductor memory
US6400615B2 · kind B2 · utility
5Cited by
4References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 21, 2000 |
| Grant date | Jun 4, 2002 |
| Priority date | — |
| Expiry date | Mar 21, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/145
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A voltage raising circuit of a semiconductor memory includes a compensating circuit. The compensating circuit has a negative dependency on a source voltage for controlling a variation of a raised voltage caused by a variation of the source voltage, and a positive dependency on temperature for controlling a variation of the raised voltage caused by a variation of the temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.