Semiconductor device including a fuse circuit in which the electric current is cut off after blowing so as to prevent voltage fall
US6400632B1 · kind B1 · utility
31Cited by
5References
16Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Mar 30, 2001 |
| Grant date | Jun 4, 2002 |
| Priority date | — |
| Expiry date | Mar 30, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The antifuse is brought into an electrically conducted state by setting the voltage Vpgm to a high voltage after activating the signal SA and setting the node N1 once to an L-level. By inversion of the latch, the voltage of the node N1 will be the power source voltage Vcc to bring the transistor into a non-conducted state, whereby the electric current flowing through the antifuse is cut off. A semiconductor device can be provided which includes an antifuse program circuit capable of cutting the electric current off after blowing, so as to prevent decrease in the blowing voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.