Patent · US Expired

Method for generation of electrically conducting or semiconducting structures in three dimensions and methods for erasure of the same structures

US6403396B1 · kind B1 · utility

83Cited by
12References
37Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 28, 1999
Grant dateJun 11, 2002
Priority date
Expiry dateSep 28, 2019

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Electrically conducting and/or semiconducting structures are generated in three dimensions in a composite matrix including two or more materials provided in spatially separate and homogenous material structures. Materials undergo specific physical and/or chemical changes causing transition from electrically non-conducing to electrically conducting and semiconducting state. The material structures are radiated with a given intensity or frequency characteristic adapted to the specific response of the material. Spatially modulating the radiation according to a protocol representing a pattern of electrically conducing and semiconducting structures in the relevant material structures generates the two dimensional electrically conducting and semiconducting structures in the material structure. The composite matrix is provided with electrically conducting and semiconducting structures in three dimensions. Spectral ranges of the radiation include gamma, x-ray, ultraviolet, visible light, inferred, and microwave. Particle radiation used for irradiation includes elementary particles including protons, neutrons, electrons, ions, molecules, and material aggregates.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.