Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates

US6403975B1 · kind B1 · utility

Assignee

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Karl Brunner · Nazareth, US
• Karl Eberl · Altötting, DE

Key dates

• Filing date: Apr 8, 1997
• Grant date: Jun 11, 2002
• Expiry date: Apr 8, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/812
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A semiconductor component, selected from the group comprising a photodetector, a light emitting diode, an optical modulator and a waveguide. The semiconductor component comprises an Si substrate, an active region formed on said substrate, and an Si capping layer on said active region. In one embodiment the active region is a superlattice comprising alternating layers of Si1-yCy and Si1-x-yGexCy, with the atomic fraction y of the Si1-x-yGexCy layers being equal to or different from the atomic fraction y of the Si1-yCy layers. In another embodiment it is a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si1-yCy and Si1-xGex layers. In a third embodiment it is a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si1-yCy and Si1-x-yGexCy layers, with the atomic fraction y of the Si1-x-yGexCy layers being equal to or different from the atomic fraction y of the Si1-yCy layers. The components have faborable optical and electrical properties and are suitable for integration on a Si substrate.