Optical semiconductor device and method of fabricating the same
US6403986B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 1998 |
| Grant date | Jun 11, 2002 |
| Priority date | — |
| Expiry date | Feb 18, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical semiconductor device includes an optical semiconductor element, a semiconductor region, and a buried layer. The optical semiconductor element is formed on a semiconductor substrate. The semiconductor region opposes the optical semiconductor element and essentially surrounds the optical semiconductor element to form walls. The buried layer is arranged between the walls of the semiconductor region and the optical semiconductor element and formed by vapor phase epitaxy. In this optical semiconductor device, a distance between the wall of the semiconductor region and a side wall of the optical semiconductor element is larger in a portion in which the growth rate of the vapor phase epitaxy in a horizontal direction from the side wall of the optical semiconductor element and the wall of the semiconductor region is higher.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.