Complementary metal-oxide semiconductor device

US6403992B1 · kind B1 · utility

Assignee

• Integrated Technology Express Inc. · TW

Inventor

• Cheng-Ta Wei · Hsinchu, TW

Key dates

• Filing date: Aug 30, 2001
• Grant date: Jun 11, 2002
• Expiry date: Aug 30, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/856

Abstract

A complementary metal-oxide semiconductor (CMOS) device, employing circuit conversion to achieve coexistent multiple voltage levels without body effect. The CMOS device, formed by a typical twin-well process, has a high voltage CMOS, a low voltage CMOS and a circuit converter. The circuit converter raises the operation voltage of the low voltage PMOS in the low voltage CMOS (in the N-type substrate) up to that of the high voltage PMOS in the high voltage CMOS. Alternatively, the circuit converter reduces the operation voltage of the low voltage NMOS in the low voltage CMOS to that of the high voltage NMOS in the high voltage CMOS. Thus, the body effect does not occur to the CMOS device.