Solid-state image sensor of a MOS structure
US6403998B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 8, 1999 |
| Grant date | Jun 11, 2002 |
| Priority date | — |
| Expiry date | Nov 8, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
In a MOS type solid-state image sensor having an image pickup area formed at a semiconductor substrate and comprising a two-dimensional array of row and column unit cells including a photoelectric conversion section and signal scanning circuit, a first p well area is provided in a surface portion of an n type silicon substrate and a second p well area is selectively provided in the surface portion of the first p well area and is higher in p type impurity concentration than the first p well area. In the image pickup area, the photoelectric conversion section is formed in the first p well area and the signal scanning circuit section is formed in the second p well area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.