Light sensitive element and light sensitive element having internal circuitry
US6404029B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2000 |
| Grant date | Jun 11, 2002 |
| Priority date | — |
| Expiry date | Sep 6, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/14
Abstract
A photosensitive device includes a semiconductor substrate and a first semiconductor layer, both of a first conductivity type, with the semiconductor layer being formed on the semiconductor substrate and having a lower impurity concentration than that of the semiconductor substrate. A second semiconductor layer, of a second conductivity type, is formed on the first semiconductor layer and at least one diffusion layer of the first conductivity type is formed from the surface of the second semiconductor layer so as to reach the surface of the first semiconductor layer. The diffusion layer subdivides the second semiconductor layer into a plurality of semiconductor regions At least one photodiode portion for converting signal light into an electrical signal is formed at a junction between at least one of the plurality of semiconductor regions and the first semiconductor layer. A depletion layer which is formed in the first semiconductor layer when a reverse bias voltage is applied to the at least one photodiode portion has a field intensity of about 0.3 V/&mgr;m or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.