Thin film device, thin film head, and magnetoresistive element
US6404603B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1999 |
| Grant date | Jun 11, 2002 |
| Priority date | — |
| Expiry date | Sep 30, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/40
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An object of the invention is to improve thermal conductivity of a first and a second shield gap films and to suppress a rise in temperature in an MR element.A first shield gap film and a second shield gap film are formed of an insulating film which includes AlN as a main component and the (002) plane of AlN is oriented to the vertical direction to the surface of the insulating film. As a result, higher thermal conductivity can be attained compared to the case where a plurality of crystal surfaces of AlN are oriented to the vertical direction to the surface of the insulating film, and the heat generated in the MR element can be effectively dissipated. The insulating film may include a small amount of Ar. In such a case, the hardness is increased preventing the first and second shield gap films from being excessively polished when forming an air bearing surface. The insulating film may also include oxygen. If the insulating film includes oxygen, the stress is decreased and exfoliation of the insulating film is avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.