Semiconductor memory device having a self-refresh operation
US6404688B2 · kind B2 · utility
6Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2001 |
| Grant date | Jun 11, 2002 |
| Priority date | — |
| Expiry date | Feb 26, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/1045
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device having a self-refresh operation includes a first circuit generating a first signal that specifies a first self-refresh cycle by a non-volatile circuit element provided in the semiconductor memory device, a second circuit receiving a second signal that specifies a second self-refresh cycle via a terminal that is used in common to another signal, and a third circuit generating a pulse signal having one of the first and second self-refresh cycles, the pulse signal being related to the self-refresh operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.