Film-forming composition
US6406794B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2001 |
| Grant date | Jun 18, 2002 |
| Priority date | — |
| Expiry date | Feb 8, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A film-forming composition comprising: (A) at least one silane compound selected from the group consisting of a compound shown by the following formula (1), a compound shown by the following formula (2), and a compound shown by the following formula (3) and a hydrolysis condensate of these compounds:R2R3Si(OR1)2  (1)R2Si(OR1)3  (2)Si(OR1)4  (3)wherein R1, R2, and R3 individually represent a monovalent organic group, (B) a polyether shown by the formula (PEO)p—(PPO)q—(PEO)r, wherein PEO represents a polyethylene oxide unit, PPO represents a polypropylene oxide unit, p is a number of 2-200, q is a number of 20-80, and r is a number of 2-200, and (C) an organic solvent. The composition exhibits superior storage stability, is capable of producing a low-density film having a small relative dielectric constant, low water absorption properties, and small vacant space size, and is thus suitable as an interlayer dielectric material in the manufacture of semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.