Compliant universal substrates for optoelectronic and electronic devices
US6406795B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 1999 |
| Grant date | Jun 18, 2002 |
| Priority date | — |
| Expiry date | Oct 25, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A compliant substrate for the formation of semiconductor devices includes a crystalline base layer and a thin-film crystalline layer on and loosely bonded to the base layers. The thin-film layer has a high degree of lattice flexibility. A compliant substrate for formation of semiconductor devices may also include a crystalline base layer, and, on the base layer, a thin film layer having a lattice constant different from the lattice constant of the base layer. A method for formation of a compliant substrate for formation of semiconductor devices includes forming a thin film layer on a first substrate, bonding a first surface of the thin film layer to a surface of a second substrate having a lattice constant different from the lattice constant of the thin film layer either with or without twist bonding, and removing the first substrate to expose a second surface of the thin film layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.