Patent · US Expired

Dynamically controlled crystal growth system

US6406903B2 · kind B2 · utility

18Cited by
4References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 10, 1998
Grant dateJun 18, 2002
Priority date
Expiry dateAug 10, 2018

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T117/1008
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Crystal growth can be initiated and controlled by dynamically controlled vapor diffusion or temperature change. In one aspect, the present invention uses a precisely controlled vapor diffusion approach to monitor and control protein crystal growth. The system utilizes a humidity sensor and various interfaces under computer control to effect virtually any evaporation rate from a number of different growth solutions simultaneously by means of an evaporative gas flow. A static laser light scattering sensor can be used to detect aggregation events and trigger a change in the evaporation rate for a growth solution. A control/follower configuration can be used to actively monitor one chamber and accurately control replicate chambers relative to the control chamber. In a second aspect, the invention exploits the varying solubility of proteins versus temperature to control the growth of protein crystals. This system contains miniature thermoelectric devices under microcomputer control that change temperature as needed to grow crystals of a given protein. Complex temperature ramps are possible using this approach. A static laser light scattering probe also can be used in this system as a no…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.