Fabrication of visible light emitting device formed from wide band gap semiconductor doped with a rare earth element
US6406930B2 · kind B2 · utility
3Cited by
3References
11Claims
0Family size
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Key dates
| Filing date | Apr 30, 2001 |
| Grant date | Jun 18, 2002 |
| Priority date | — |
| Expiry date | Apr 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/052
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A visible light emitting device includes a wide band gap semiconductor layer doped with one or more elements which emit light at various wavelengths based upon atomic transitions. The semiconductor preferably is GaN, InN, AIN, BN or alloys thereof doped with a lanthanide element such as Er, Pr or Tm. The light emission can be enhanced by annealing the WBGS.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.