Method of forming an oxide layer

US6407008B1 · kind B1 · utility

Assignee

• Integrated Device Technology, Inc. · US

Inventors

• Yingbo Jia · Fremont, US
• Ohm-Guo Pan · Portland, US
• Long Wang · Cupertino, US
• Jeong Yeol Choi · Fremont, US
• Guo-Qiang Lo · Singapore, SG
• Shih-Ked Lee · Fremont, US

Key dates

• Filing date: May 5, 2000
• Grant date: Jun 18, 2002
• Expiry date: May 5, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02255
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods for forming nitrided oxides in semiconductor devices by rapid thermal oxidation, in which a semiconductor substrate having an exposed silicon surface is placed into a thermal process chamber. Then, an ambient gas comprising N2O and an inert gas such as argon or N2 is introduced into the process chamber. Next, the silicon surface is heated to a predefined process temperature, thereby oxidizing at least a portion of the silicon surface. Finally, the semiconductor substrate is cooled. An ultra-thin oxide layer with uniform oxide characteristics, such as more boron penetration resistance, good oxide composition and thickness uniformity, increased charge to breakdown voltage in the oxide layer, can be formed.