Heat treatment apparatus, heat treatment process employing the same, and process for producing semiconductor article
US6407367B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 1998 |
| Grant date | Jun 18, 2002 |
| Priority date | — |
| Expiry date | Dec 21, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A novel heat treatment apparatus is provided which comprises a first tube, a second tube placed therein, and a heater. A semiconductor article is heat treated in the second tube in an atmospheric gas. At least an internal face of the second tube is constructed from non-silicon oxide, and the first tube is constructed from vitreous silica. In this way, hydrogen gas is fed to a wafer without passing over a face comprised of silicon oxide heated to a high temperature. This apparatus prevents metal contamination of the wafer by fused quartz tube as the contamination source and also prevents etching of silicon by reaction of silicon oxide and silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.