Ridge laser with oxidized strain-compensated superlattice of group III-V semiconductor

US6407407B1 · kind B1 · utility

Assignee

• The United States of America, as represented by the Director, National Security Agency · US

Inventors

• Frederick G. Johnson · Lanham, US
• Bikash Koley · Sunnyvale, US
• Linda M. Wasiczko · College Park, US

Key dates

• Filing date: May 2, 2000
• Grant date: Jun 18, 2002
• Expiry date: May 2, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/3425
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A ridge laser that includes a Group III-V semiconductor material substrate; a first selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material; a multiple quantum well active region; a second selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material; a Group III-V semiconductor material cap layer; and a contact material. Each at least one strain-compensated superlattice includes at least two monolayers of a Group III-V semiconductor material and at least two monolayers of an aluminum-bearing Group III-V semiconductor material. In the preferred embodiment, the substrate is InP of any type; each selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material is InAs/AlAs, where each at least one superlattice of InAs/AlAs includes at least two monolayers of InAs and at least two monolayers of AlAs; the multiple quantum well active region is InGaAsP lattice matched to the InP substrate, the Group III-V semiconductor material cap layer is InP, and the contact material is gold.