Photoelectric conversion device and method of manufacturing the same
US6407417B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2000 |
| Grant date | Jun 18, 2002 |
| Priority date | — |
| Expiry date | Jun 14, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
In order to improve transistor characteristics (operating characteristics), separation characteristics between pixels, and high withstanding voltage characteristics, a photoelectric conversion device has a first conductive type well layer 12 provided on a semiconductor substrate 11 and a second conductive type light receiving region (photoelectric conversion region) 14 provided on the well layer 12. At a position under the light receiving region 14, there is provided a first conductive type impurity layer (depletion layer forming layer) 20 in which the impurity concentration thereof is set to be lower than that of the well layer 12 for enabling a reduction in the coupling capacitance, and a second conductive type impurity layer (reverse depletion layer forming layer) 17 in which the impurity concentration thereof is set to be lower than that of the light receiving region 14, such that at least a part thereof is located inside of the light receiving region 14, seen in plan view, for enabling extension of the depletion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.