Semiconductor device
US6407432B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 1999 |
| Grant date | Jun 18, 2002 |
| Priority date | — |
| Expiry date | Dec 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19041
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A small sized semiconductor device having a high insulating performance between a primary side circuit and a secondary side circuit is realized. A circuit region 2, plural first and second terminal electrodes 5 connected to the circuit region 3, and an insulation-separation region 4 for separating electrically the first terminal electrodes from the second terminal electrodes, and for transmitting signals between the first and the second terminal electrodes are formed onto a semiconductor chip 1, and the insulation-separation region 4 is provided between the first and second terminal electrodes. The interval between the first and the second terminal electrodes on the same semiconductor chip can be separated with high insulating performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.