Semiconductor device and method of manufacturing the same
US6407453B1 · kind B1 · utility
20Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2000 |
| Grant date | Jun 18, 2002 |
| Priority date | — |
| Expiry date | Mar 9, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a semiconductor device, comprising a semiconductor substrate, an insulating layer and a metallic wiring layer formed on the semiconductor substrate; and an intermediate layer formed between the insulating layer and the metallic wiring layer in contact with both the insulating layer and the metallic wiring layer, wherein the intermediate layer contains the metallic material forming the metallic wiring layer, Si and O.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.