Semiconductor integrated switching circuit
US6407614B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 29, 2001 |
| Grant date | Jun 18, 2002 |
| Priority date | — |
| Expiry date | Mar 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04B1/406
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
The semiconductor integrated switching circuit S1 employed in a dual-band mobile phone comprises the first through fourth field effect transistor 1, 2, 3, 4 by which electrical connection between either of the first through fourth input/output terminal 22 through 25 and the common input-output terminal 21 are controlled, the fifth field effect transistor 5 which becomes conducting with the second field effect transistor 2, and the series resonance circuit 51 having a resonance frequency equals to a frequency of higher harmonic of the signal passing through the second field effect transistor 2. The fifth field effect transistor 5 and the series resonance circuit 51 are connected in series and attached between the common input-output terminal 21 and the ground so as to divert the higher harmonic of the signal without giving passing loss to the signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.