Plasma process method
US6410102B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 13, 1997 |
| Grant date | Jun 25, 2002 |
| Priority date | — |
| Expiry date | Jun 13, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/5093
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma process, which can fabricate a deposition film in short time and at low cost, which can fabricate a deposition film with excellent reproducibility, which can greatly decrease the cleaning time upon cleaning, and which is optimum for fabricating a deposit film, especially a photosensitive member for electrophotography, capable of achieving a high charge potential upon electrification and capable of obtaining clear images with less image defects, is arranged such that a raw-material gas comprising silicon is introduced into a deposition chamber while evacuating the deposition chamber capable of being kept airtight in a vacuum, the raw-material gas is decomposed by high-frequency power in the VHF band, film formation is carried out to form a deposit film on a substrate installed in the deposition chamber, and thereafter cleaning inside the deposition chamber is carried out by etching and removing a deposit film depositing inside the deposition chamber, using a gas containing at least fluorine and using high-frequency power of a frequency lower than the VHF band.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.