Manufacturing method for reflection type liquid crystal display
US6410358B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2000 |
| Grant date | Jun 25, 2002 |
| Priority date | — |
| Expiry date | Jul 14, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136227
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
On an insulating substrate (10), there are formed a first gate electrode (11), a gate insulating film (12), a semiconductor film (13), and an interlayer insulating film (15). Above the interlayer insulating film (15), a TFT is formed having a second gate electrode (17) connected to the first gate electrode (11). Then, a photosensitive resin (70) is formed over the entire surface of the extant layers. Subsequently, first exposure (75) is applied using a first mask (71), and second exposure (76) is then applied using a second mask (72) with a larger amount of light than used for the first exposure. The second mask (72) has an opening at a position corresponding to a source (13s). Thereafter, the photosensitive resin film (70) is developed thereby forming a contact hole (73) and a recess (74).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.