Soi-body selective link method and apparatus

US6410369B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Roy C. Flaker · South Burlington, US
• Louis L. Hsu · Fishkill, US
• Fariborz Assaderaghi · Jefferson Valley, US
• Jack A. Mandelman · Stormville, US

Key dates

• Filing date: Jun 12, 2000
• Grant date: Jun 25, 2002
• Expiry date: Jun 12, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

A silicon-on-insulator (SOI) structure and method of making the same includes an SOI wafer having a silicon layer of an original thickness dimension formed upon an isolation oxidation layer. At least two p-type bodies of at least two SOI field effect transistors (PFETs) are formed in the silicon layer. At least two n-type bodies of at least two SOI field effect transistors (NFETs) are also formed in the silicon layer. Lastly, an SOI body link is formed in the silicon layer of the SOI wafer adjacent the isolation oxidation layer for selectively connecting desired bodies of either the p-type SOI FETs or the n-type SOI FETs and for allowing the connected bodies to float.