Silicon carbide: germanium (SiC:Ge) heterojunction bipolar transistor; a new semiconductor transistor for high-speed, high-power applications

US6410396B1 · kind B1 · utility

Assignee

• Mississippi State University · US

Inventors

• Jeffrey Casady · Starkville, US
• Michael S. Mazzola · Ocean Springs, US
• Stephen E. Saddow · Columbia, US

Key dates

• Filing date: Apr 4, 2001
• Grant date: Jun 25, 2002
• Expiry date: Apr 4, 2021

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/931

Abstract

Devices and methods for fabricating wholly silicon carbide heterojunction bipolar transistors (HBTs) using germanium base doping to produce suitable emitter/base heterojunctions. In one variation, all device layers are are grown epitaxially and the heterojunction is created by introducing a pseudoalloying material, such as germanium, to form a graded implant. In other variations, the device epitaxial layers are 1) grown directly onto a semi-insulating substrate, 2) the semi-insulating epitaxial layer is grown onto a conducting substrate; 3) the subcollector is grown on a lightly doped p-type epitaxial layer grown on a conducting substrate; and 4) the subcollector is grown directly on a conducting substrate. Another variation comprises a multi-finger HBT with bridging conductor connections among emitter fingers. Yet another variation includes growth of layers using dopants other than nitrogent or aluminum. Yet another variation includes implantation of region within one or more epitaxial layers, rather than use of separate epitaxial layers.