Semiconductor device with transparent link area for silicide applications and fabrication thereof
US6410413B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2001 |
| Grant date | Jun 25, 2002 |
| Priority date | — |
| Expiry date | Jul 24, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Useful to inhibit reverse engineering, semiconductor devices and methods therefore include formation of two active regions over a substrate region in the semiconductor device. According to an example embodiment, a dopable link, or region, between two heavily doped regions can be doped to achieve a first polarity type, with the two heavily doped regions of the opposite polarity. If dictated by design requirements, the dopable region is adapted to conductively link the two heavily doped regions. A dielectric is formed over the dopable region and extends over a portion of each of the two heavily doped regions to inhibit silicide formation over edges of the dopable region. In connection with a salicide process, a silicide is then formed adjacent the dielectric and formed over another portion of the two heavily doped regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.