Chloride-free process for the production of alkylsilanes suitable for microelectronic applications
US6410770B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2001 |
| Grant date | Jun 25, 2002 |
| Priority date | — |
| Expiry date | Feb 7, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07F7/0896
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
This invention includes a process for producing an alkylsilane, comprising reducing an alkoxysilane in the presence of an alkali metal hydride in the presence of a high boiling solvent. The alkylsilane has a boiling point lower than the boiling point of the solvent, which is typically diglyme. This invention also includes a chloride-free alkylsilane formed from the reduction of an alkoxysilane in the presence of an alkali metal hydride. The alkylsilane produced according to the process of the present invention may be useful in microelectronic applications, such as in the production of chloride-free low dielectric constant materials which may be produced by the chemical vapor deposition of such silanes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.