Silicon nanoparticle electronic switches
US6410934B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2001 |
| Grant date | Jun 25, 2002 |
| Priority date | — |
| Expiry date | Feb 9, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/014
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An electronic fast switch for operation at room temperature utilizing uniform silicon nanoparticles (˜1 nm with about 1 part per thousand exceeding 1 nm) between two conducting electrodes. The silicon nanoparticles, when on an n-type silicon substrate exhibit, at zero bias, a large differential conductance, approaching near full transparency. The conductance is observed after one of the electrode is first biased at a voltage in the range 3 to 5 eV (switching voltage), otherwise the device does not conduct (closed). A practical MOSFET switch of the invention includes the silicon nanoparticles in a body of the MOSFET, with the gate and substrate forming the two conducting electrodes. Electrodes may be realized by metal in other switches of the invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.