Semiconductor device having a P-N junction with a photosensitive region
US6410970B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 22, 2000 |
| Grant date | Jun 25, 2002 |
| Priority date | — |
| Expiry date | Mar 22, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/221
Abstract
A semiconductor device that has a p-n junction with a photosensitive region partially having a diffusion region and a non-diffused region when the p-n junction is subjected to a reverse bias voltage. When an incident light (e.g. a laser) is directed at the surface of the photosensitive region, hole-electron pairs are generated in the partial diffusion region within the photosensitive region. As a result, the current through the photosensitive region changes in a substantially linear fashion with the intensity of the incident light. The semiconductor device can be configured in a circuit to provide substantially linear power amplification.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.