Power integrated circuit
US6411155B2 · kind B2 · utility
27Cited by
17References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 8, 2001 |
| Grant date | Jun 25, 2002 |
| Priority date | — |
| Expiry date | Jan 8, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/221
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A monolithic assembly includes vertical power semiconductor components formed throughout the thickness of a low doped semiconductive wafer of a first conductivity type, whose bottom surface is uniformly coated with a metallization. At least some of these components, so-called autonomous components, are formed in insulated sections of the substrate, whose lateral insulation is provided by a diffused wall of the second conductivity type and whose bottom is insulated through a dielectric layer interposed between the bottom surface of the substrate and the metallization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.