Semiconductor laser and method of manufacturing the same
US6411637B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 3, 1999 |
| Grant date | Jun 25, 2002 |
| Priority date | — |
| Expiry date | Jun 3, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2009
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser with a separate confinement hetero-structure (SCH) comprises an n-type GaInP lower cladding layer, a lower optical confinement layer, a GaInAs active layer, a upper optical confinement layer, and a p-type GaInP first upper cladding layer. These layers are successively grown on a n-type GaAs substrate. On the first upper cladding layer, an optical guiding layer and a p-type second cladding layer sandwiched by current blocking layers are provided. The lower optical confinement layer and the upper optical confinement layer have a super lattice structure of GaInAsP quantum well layers and GaInP barrier layers alternately stacked with each others.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.