Techniques for fabricating and packaging multi-wavelength semiconductor laser array devices (chips) and their applications in system architectures
US6411642B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 28, 2000 |
| Grant date | Jun 25, 2002 |
| Priority date | — |
| Expiry date | Mar 28, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4087
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Phase masks which can be used to make both linear and curved gratings of single or multiple submicron pitches, with or without any abrupt quarter-wavelength shifts (or gradually varying finer phase shifts) simultaneously on the wafer/substrate. The phase masks are made using direct write electron or ion-beam lithography of two times the required submicron pitches of linear and curved gratings on commercially available &pgr; phase-shifting material on a quartz substrate and wet or dry etching of the &pgr; phase-shifting material. The phase masks can be used in connection with making multi-wavelength laser diode chips. The laser diodes have a ridge structure with metal shoulders on either side of the ridge. The laser diode chip, with different wavelength lasers, is bonded and interfaced to a novel microwave substrate that allows for high signal-to-noise ratio and low crosstalk. The substrate is packaged in a low loss rugged housing for WDM applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.