Method for forming a CVD silicon film
US6413833B2 · kind B2 · utility
4Cited by
2References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 29, 1999 |
| Grant date | Jul 2, 2002 |
| Priority date | — |
| Expiry date | Jan 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A method for forming hemispherical grains (HSG) on a cylindrical bottom electrode of a memory capacitor in a memory cell includes the step of introducing phosphine gas before introducing silane gas onto a silicon wafer. The introduction of phosphine gas before introduction of silane gas prevents a lower phosphorous concentration portion in the bottom cylindrical bottom electrode, thereby achieving a suitable HSG structure on the cylindrical bottom electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.