Method for producing dielectric porcelain composition for electronic device
US6413896B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2000 |
| Grant date | Jul 2, 2002 |
| Priority date | — |
| Expiry date | Dec 6, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method for producing X(BaZ.Sr1-Z)(Zn⅓.(TaM.Nb1-M)⅔)O3—Y(BaZ′.Sr1-Z′)(Ga½.Ta½)O3 solid solution system, characterized in that sintering is carried out at a temperature of 1400° C. to 1550° C. in an atmosphere of N2 containing oxygen in a concentration of 6% to 40% or sintering is carried out at a temperature of 1400° C. to 1550° C. after presintering at a temperature of 900° C. to 1300° C. This method is suitably used in order to constantly produce a dielectric porcelain composition for an electronic device which has a reduced temperature coefficient of resonance frequency and an excellent specific dielectric constant, and is uniform with respect to the quality distribution in one composition, by suppressing the evaporation of the Zn contained in a conventional porcelain composition of a perovskite type compound and adjusting the oxygen concentration in an atmosphere for sintering to a specific value without controlling a composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.