Thin film device, thin film magnetic head and magnetoresistive element
US6414825B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1999 |
| Grant date | Jul 2, 2002 |
| Priority date | — |
| Expiry date | Sep 30, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/40
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An object of the invention is to improve the thermal conductivity and the hardness of a first shield gap film and a second shield gap film. Another object is to improve the thermal conductivity while decreasing the stress. The first shield gap film and the second shield gap film are formed of an insulating film which includes at least one of BN, SiN or CN as the main component, a little Ar and oxygen. Higher thermal conductivity can be obtained by using the insulating film which includes at least one of BN, SiN, or CN so that the heat generated in an MR element can be effectively dissipated. In addition, including Ar improves the hardness so that excessive polishing can be suppressed at the time of forming the air bearing surface. Moreover, including oxygen decreases the stress and exfoliation of the first and the second shield gap films can be avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.