Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing same, and optical device including same
US6414975B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 1998 |
| Grant date | Jul 2, 2002 |
| Priority date | — |
| Expiry date | Mar 26, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8232
Abstract
The invention provides a semiconductor light emitting device whose operating voltage can be easily reduced, a method of producing the same, and an optical device. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type clad layer, a first semiconductor layer, and a second semiconductor layer of ZnSe are successively grown on an n-type substrate. An alkali compound layer of Na2Se is then formed thereon. Subsequently, a heat treatment is performed by means of irradiation of an excimer laser beam so that at least a part of the second semiconductor layer and at least a part of the alkali compound layer are altered thereby forming a contact layer. Furthermore, a p-side electrode is formed on the contact layer. The contact layer contains an alkali metal serving as a p-type impurity so that the contact layer has a low electric resistance thereby achieving a reduction in the operating voltage and thus a reduction in the operating power. As a result of the reduction in the operating power, the device life is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.