Semiconductor laser device
US6414977B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2001 |
| Grant date | Jul 2, 2002 |
| Priority date | — |
| Expiry date | Apr 9, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32325
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device exhibiting a reduced threshold current with less deterioration in temperature properties in current-optical output performance and excellent beam properties. The semiconductor laser device has a current blocking layer of n-AlInP having a stripe-shaped opening disposed on a first upper cladding layer, the first upper cladding layer and the current blocking layer facing the opening respectively are covered by a buffer layer of p-Al0.7Ga0.5As and a second upper cladding layer of p-(Al0.7Ga0.3)0.5In0.5P is disposed on the buffer layer, to prevent lattice defect formation during growth of a crystalline layer on the surface of the current blocking layer facing the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.