Patent · US Expired

Phosphor converted light emitting diode

US6417019B1 · kind B1 · utility

190Cited by
6References
34Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 4, 2001
Grant dateJul 9, 2002
Priority date
Expiry dateApr 4, 2021

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/00014
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

A method of fabricating a light emitting device includes providing a light emitting diode that emits primary light, and locating proximate to the light emitting diode a (Sr1−u−v−xMguCavBax)(Ga2−y−zAlyInzS4):Eu2+ phosphor material capable of absorbing at least a portion of the primary light and emitting secondary light having a wavelength longer than a wavelength of the primary light. The composition of the phosphor material can be selected to determine the wavelengths of the secondary light. In one embodiment, the light emitting device includes the phosphor material dispersed as phosphor particles in another material disposed around the light emitting diode. In another embodiment, the light emitting device includes the phosphor material deposited as a phosphor film on at least one surface of the light emitting diode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.