Method for forming element isolating region
US6417073B2 · kind B2 · utility
24Cited by
5References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 20, 2001 |
| Grant date | Jul 9, 2002 |
| Priority date | — |
| Expiry date | Mar 20, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method for forming a Shallow Trench Isolation (STI) easy to suppress an occurrence of the debot even when the micro-scratch is present. A silicon oxide film made of an organic Spin-On-Glass (SOG) film is formed on a surface of a silicon oxide film in which a micro-scratch is generated by Chemical Mechanical Polishing (CMP). Such anisotropic etching is conducted that an etching rate for a silicon oxide film may be equal to that for the silicon nitride film, to remove the silicon nitride film and then remove by wet etching a pad oxide film, to nevertheless prevent a debot from occurring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.