Method for producing thin substrate layers
US6417075B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2001 |
| Grant date | Jul 9, 2002 |
| Priority date | — |
| Expiry date | Mar 22, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/967
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method of producing very thin substrate layers, particularly thin semiconductor areas, which may comprise integrated circuits. In the method two substrates (1, 2) are bonded by their faces via one or several intermediate connecting layers (3, 4). At least one of the bonding layers or the face of one of the substrates is structured before in such a way that channel-shaped recesses (5) are formed which permit a lateral penetration of an etching agent. The resulting wafer stack is thinned from one side down to the desired thickness of the layer. Finally, this thin layer is detached from the remaining substrate by introduction of the etching agent into the channel-shaped recesses. This detaching process is a low-price wet chemical process that does not expose the chip and the added value integrated thereon to any risk.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.